TJ20A10M3 2013-11-01 1 toshiba field effect transistor s ilicon p channel mos type (u-mosvi) TJ20A10M3 swiching regulator applications ? low drain-source on resistance: r ds (on) = 63 m (typ.) ? high forward transfer admittance: |y fs | = 50 s (typ.) ? low leakage current: i dss = ? 10 a (max) (v ds = ? 100 v) ? enhancement-model: v th = ? 2.0 to ? 4.0 v (v ds = ? 10 v, i d = ? 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss ?100 v drain-gate voltage (r gs = 20 k ) v dgr ?100 v gate-source voltage v gss 20 v dc (note 1) i d ?20 drain current pulse (note 1) i dp ?40 a drain power dissipation (tc = 25c) p d 35 w single pulse avalanche energy (note 2) e as 124 mj avalanche current i ar ?20 a repetitive avalanche energy (note 3) e ar 2.29 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heav y loads (e.g. the application of high temperature/current/voltage a nd the significant change in temperature, etc.) may cause th is product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: please use devices on condition that the channel temperature is below 150c. note 2: v dd = ? 25 v, t ch = 25c, l = 500 h, r g = 25 , i ar = ? 20 a note 3: repetitive rating; pulse width li mited by maximum channel temperature. thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch ? c) 3.57 c / w thermal resistance, channel to ambient r th (ch ? a) 62.5 c / w this transistor is an electrostatic sensit ive device. please handle with caution. unit: mm 1: gate 2: drain 3: source jedec ? jeita sc-67 toshiba 2-10u1b weight: 1.7 g (typ.) 1 3 2 start of commercial production 2009-03
TJ20A10M3 2013-11-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 20 v, v ds = 0 v ? ? 100 na drain cut-off current i dss v ds = ?100 v, v gs = 0 v ? ? ?10 a v (br) dss i d = ?10 ma, v gs = 0 v ?100 ? ? drain-source breakdown voltage v (br) dsx i d = ?10 ma, v gs = 20 v ?75 ? ? v gate threshold voltage v th v ds = ?10 v, i d = ?1 ma ?2.0 ? ? 4.0 v drain-source on resistance r ds (on) v gs = ?10 v, i d = ?10 a ? 63 90 m forward transfer admittance ? y fs ? v ds = ?10 v, i d = ?10 a 25 50 ? s input capacitance c iss ? 5500 ? reverse transfer capacitance c rss ? 200 ? output capacitance c oss v ds = ?10v, v gs = 0 v, f = 1 mhz ? 290 ? pf rise time t r ? 13 ? turn-on time t on ? 27 ? fall time t f ? 105 ? switching time turn-off time t off ? 420 ? ns total gate charge (gate-source plus gate-drain) q g ? 120 ? gate-source charge q gs ? 20 ? gate-drain (?miller?) charge q gd v dd ?80 v, v gs = ?10 v, i d = ?20 a ? 32 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? ? 20 a pulse drain reverse current (note 1) i drp ? ? ? ? 40 a forward voltage (diode) v dsf i dr = ?20 a, v gs = 0 v ? ? 1.4 v reverse recovery time t rr ? 76 ? ns reverse recovery charge q rr i dr = ?20 a, v gs = 0 v, di dr /dt = ? 50 a/ s ? 104 ? nc marking duty 1%, t w = 10 s ?10 v 0 v v gs r l = 5 v dd ?50 v i d = ?10 a v out 4.7 note 4: a line under a lot no. ident ifies the indication of product labels not underlined: [[pb]]/includes > mcv underlined: [[g]]/rohs compatible or [[g]]/rohs [[pb]] please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of product. the rohs is directive 2011/65/e u of the european parliament and of the council of 8 june 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. j20a10m 3 lot no. note 4 part no. (or abbreviation code)
TJ20A10M3 2013-11-01 3
TJ20A10M3 2013-11-01 4 ? 1 ? 10 100 1000 10 v gs = ? 10 v ? 100 25 ? 0.1 ? 100 ? 1 ? 10 tc = ? 55c 100 1 100 10 0 ? 2 ? 0.4 ? 0.8 ? 1.2 0 ? 2 ? 10 ? 4 ? 6 ? 5 ? 10 i d = ? 20 a ? 1.6 ? 8 0 ? 20 ? 4 ? 12 ? 8 ? 1 0 ? 5 ? 2 ? 3 tc = ? 55c 25 100 ? 4 ? 16 0 ? 60 ? 12 ? 36 ? 24 ? 48 ? 2 0 ? 10 ? 4 ? 6 ? 8 v gs = ? 3.7 v ? 4.2 ? 5 ? 4.5 ? 6 ? 4 ? 10 ? 3.9 ? 3.8 0 ? 20 ? 4 ? 12 ? 8 ? 16 ? 0.6 0 ? 3 ? 1.2 ? 1.8 ? 2.4 v gs = ? 3.6 v ? 3.9 ? 5 ? 4.5 ? 6 ? 4 ? 10 ? 4.2 ? 3.8 ? 3.7 i d ? v ds common source tc = 25c pulse test i d ? v ds i d ? v gs v ds ? v gs common source tc = 25c pulse test |y fs | ? i d r ds (on) ? i d drain-source voltage v ds (v) drain current i d (a) drain-source voltage v ds (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) drain current i d (a) drain-source on resistance r ds (on) (m ) drain-source voltage v ds (v) forward transfer admittance ? y fs ? (s) common source tc = 25c pulse test common source tc = 25c pulse test common source v ds = ? 10 v pulse test common source v ds = ? 10 v pulse test
TJ20A10M3 2013-11-01 5 ? 3.5 ? 1 ? 2 0 ? 80 0 40 120 160 ? 40 80 ? 3 ? 2.5 ? 1.5 ? 0.5 100 10000 1000 ? 1 ? 0.1 ? 100 ? 10 c iss c oss c rss 10 1 ? 1 ? 100 0 ? 2 ? 0.8 ? 1.2 ? 10 ? 10 ? 3 ? 1 v gs = ? 0.1 v ? 5 ? 1.6 ? 0.4 0 200 40 80 120 ? 40 ? 80 0 40 80 i d = ? 20 a 120 v gs = ? 10 v 160 ? 5 ? 10 160 v th ? tc r ds (on) ? tc i dr ? v ds p d ? tc common source tc = 25c pulse test common source v gs = 0 v f =1mhz tc = 25c common source v ds = ? 10 v i d = ? 1ma pulse test case temperature tc (c) gate threshold voltage v th (v) case temperature tc (c) capacitance c (pf) capacitance ? v ds drain-source voltage v ds (v) drain-source on resistance r ds (on) (m ) case temperature tc (c) drain reverse current i dr (a) drain-source voltage v ds (v) drain power dissipation p d (w) common source pulse test 20 40 50 0 0 80 40 160 120 10 30 0 16 4 8 12 0 v gs 120 160 200 80 v ds v dd = ? 20 v ? 40 ? 80 40 20 total gate charge q g (nc) drain-source voltage v ds (v) dynamic input / output characteristics gate-source voltage v gs (v) common source i d = ? 20 a tc = 25c pulse test ? 100 ? 20 ? 40 ? 60 0 ? 80
TJ20A10M3 2013-11-01 6 0 25 80 120 200 160 50 75 100 125 150 40 ? 0.1 ? 1 ? 10 ? 100 v dss max ? 100 ? 1 ? 10 1 ms * 100 s * ? 0.1 ? 1000 10 0.01 10 0.1 1 100 1m 10m 100m 1 10 duty = 0.5 0.2 0.1 0.05 0.02 0.01 0.001 t p dm t duty = t/t r th (ch-c) = 3.57c/w e as ? t ch channel temperature (initial) t ch (c) avalanche energy e as (mj) ?15 v 0 v i ar b vdss v dd v ds r g = 25 v dd = ?25 v, l = 500 h ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as test circuit waveform r th ? t w pulse width t w (s) normalized transient thermal impedance r t h (t) /r th (ch-c) single pulse * single pulse tc=25 curves must be derated linearly with increase in temperature. i d max (pulse) * safe operating area drain-source voltage v ds (v) drain current i d (a) e l = 500 h v dd = ?25 v i ar = ? 20 a
TJ20A10M3 2013-11-01 7 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situat ions in which a malfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest ve rsions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and applicat ion notes for product and the precautions and condi tions set forth in the "toshiba se miconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications , including but not limited to (a) determining t he appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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product shall not be used for or incorporated into any products or systems whose manufacture, us e, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? absent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear , chemical, or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the applicable export laws and regulations includ ing, without limitation, the japanese fo reign exchange and foreign trade law and t he u.s. export administration regulat ions. export and re-export of product or related software or technology are strictly prohibit ed except in compliance with all appl icable export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclus ion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.
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